Streetman & Banerjee, Solid State Electronic Devices | Pearson
solid state electronic devices 7th edition mypearsonstore. solid state electronics mans. address cra 77 no 34 64 medellin co colombia. solid state electronic devices pdf free download. solid state electronic devices 7th edition ben. solid state electronic devices global edition 7th. download solid state electronic. state electronic devices 6th edition pdf is nearby in our digital library an online entry to it is set as public therefore you can download it instantly. Our digital library saves in multipart countries, allowing you to acquire the most less latency time to download any of our books past this one. Solid State Electronic Devices is intended for undergraduate electrical engineering students or for practicing engineers and scientists interested in updating their understanding of modern electronics. One of the most widely used introductory books on semiconductor materials, physics, devices and technology, Solid State Electronic Devices aims to: 1) develop basic semiconductor physics.
Solid state electronic devices 6th edition pdf download
Pages Page size x pts Year This page intentionally left blank Steven H. Gellings and H. What is the corresponding A? How is the column III component related to Eg? The atomic weights of Si, Ga, and As are Y 1 This view is tilted slightly from to show the alignment of atoms. The open channels are hexagonal along this direction. Graph photocurrent I versus retarding voltage Vfor several light intensities. Comment on electron microscopes compared to visible light microscopes.
This is analogous to the probability of finding a particle at position x for finding the average. What happens if a Y valley electron moves to the L valley? From Figure 3. Thus T valley electrons have much smaller mass. If light mass electrons in T were transferred to the heavier mass L valley at constant energy, they would slow down.
The conductivity would decrease see discussion in Section How many In atoms are unionized i. Is Ge? Sketch band diagram. For 2. I A 1 7 photons or 1. Draw and calculate step heights after reoxidation. Find the total excess stored electric charge and the electric field far from the depletion region on thep side.
Depletion region is mostly on the p-side, solid state electronic devices 6th edition pdf download. To double the electron current, halve the acceptor doping. Assume that the minority carrier mobilities are the same as the majority carrier mobilities given in Figure 3 a. Describe how to change the metal workfunction to switch the contact type.
The metal work function must be raised to 5. Schottky Barrier Ohmic Contact 1 i f 4. For further discussion, see Woodall, et al, J, solid state electronic devices 6th edition pdf download. Vo- 0. Vp sat, solid state electronic devices 6th edition pdf download. Find the VD which causes punch-through. Findfr if the base transit time is the dominant delay component. Thus Y. An electron hole pair created within W by absorption of a photon is collected as the electron is swept to the n side and the hole is swept to the p side.
Since only one electron-hole pair is collected per photon, there is no gain. If W is made wider to receive more photons, the transit time to collect the electron hole pairs will be longer; so, response speed will be degraded. In order to detect the light, the band gap must be smaller than the photon energy.
From figurehio sGao 5P solid state electronic devices 6th edition pdf download. Surface recombination could be reduced by growing a lattice-matched layer with a larger band gap on the surface to keep generated carriers from solid state electronic devices 6th edition pdf download surface.
Additionally, a secondary cell with a smaller band gap could be placed below the primary cell to absorb light which passes through. For example, Si could be utilized below GaAs. A quaternary alloy allows adjustment of both bandgap, and therefore wavelength, and lattice constant for epitaxial growth on convenient substrates. E Photon h-c x iio 4. In In. Density of states gives available states as a function of energy.
Effective density of states maps to the values at the band edges making calculations of carrier concentrations easy. Question 8 a Does mobility have any meaning at very high field? No, drift velocity saturates and is no longer linearly dependent on electric field.
Hall effect and resistivity measurements. Chapter 4 Self-Quiz Question 1 Consider a p-type semiconductor that has a bandgap of 1. Question 2 a What do we mean by "deep" versus "shallow" traps? Which are more harmful for semiconductor devices and why? What is an example of a deep trap in Si? Shallow traps are near the band edge. Deep traps are near the midgap. Deep traps are more harmful because they increase the chances of leakage.
Gold Au forms deep traps. Si; indirect band gap c Do absorption coefficients of photons increase or decrease with photon energy?
The absorption coefficient is very low below the band gap energy, increases abruptly at Eg, and continues to increase slowly at higher energies as more possible transitions become available with higher density of state. E F is flat in equilibrium. Is the field constant or position dependent? Note that the carrier concentration scale is logarithmic such that exponential variations in the carrier concentration with position appear as straight lines. Circulate the appropriate arrow in each case.
What are they? Which one dominates in forward bias and why? Reverse bias? Depletion capacitance is due to stored depletion charge. Diffusion capacitance is due to stored mobile carriers. Diffusion capacitance dominates in forward bias. Depletion capacitance dominates in reverse bias.
How are they defined? Alternating current signals are typically smaller than direct current bias. Both the substrate and epitaxial layer have a cubic crystal structure in the unstrained state.
Also, qualitatively show a 2-D view of solid state electronic devices 6th edition pdf download crystal structure in relation to the band diagram. Epitaxial Film Substrate JfJ. Assume no interface traps. TI metal semiconductor vacuum level -F,s energy semiconductor A postition b Is this a Schottky contact or an ohmic contact? Ohmic contact Chapter 6 Self-Quiz Question 1 Label the following MOS capacitor band diagrams as corresponding to accumulation, weak inversion, depletion, strong inversion, flatband or threshold.
Use each possibility only once. An active device gives power gain. The power comes from the direct current power supply. Which is preferable? A voltage controlled device has much higher input impedence than a current controlled device and is preferable because it consumes less power. Question 3 For Parts a through c below, consider the following low-frequency gate capacitance per unit area vs.
Same as above. SV Circle one choice below. Circle one. What clearly physically unrealistic aspect of these MOSFET characteristics besides less than smooth curves should have drawn suspicion? Chapter 7 Self-Quiz Question 1 Consider the following bipolar junction transistor BJT circuit and somewhat idealized transistor characteristics where, in particular, the voltage drop across the forward solid state electronic devices 6th edition pdf download base-emitter junction is assumed to be constant and equal to IV for simplicity.
Sketch in the Fermi level as a function of position. Qualitative accuracy is sufficient. Cincrease unchanged I decrease b base transport factor B? If we increase the base doping, qualitatively explain how the various components change.
If base doping increases, the injected electrons lost to recombination and holes supplied by the base contact for recombination increase, the electrons reaching the reverse-biased collector junction decrease because of lower electron concentration in the base, the thermally generated electrons and holes decrease slightly, and the holes injected across the emitter junction is unchanged.
Question 5 Would decreasing the base doping of the BJT increase, decrease or leave essentially unchanged circle the correct answers : a emitter injection efficiency 7? Assume essentially all recombination is direct and results in light emission.
Solid State Electronic Devices
, time: 5:00Solid state electronic devices 6th edition pdf download
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